SiC MOSFET TO-263-7
-加压烧结工艺
-高功率密度
-低开关损耗
-高功率密度
-低开关损耗
| Part Number | VDS | RDS(on) @25℃ | Package | 规格 | Datasheet |
|---|---|---|---|---|---|
| P3MOS1200V13J | 1200V | 13mΩ | TO-263-7 | 车规级、工业级 | |
| P3MOS1200V19J | 1200V | 19mΩ | TO-263-7 | 车规级、工业级 | |
| P3MOS1200V35J | 1200V | 35mΩ | TO-263-7 | 车规级、工业级 | |
| P3MOS1200V60J | 1200V | 60mΩ | TO-263-7 | 车规级、工业级 | |
| P3MOS1500V21J | 1500V | 21mΩ | TO-263-7 | 车规级、工业级 | |
| P3MOS1700V22J | 1700V | 22mΩ | TO-263-7 | 车规级、工业级 | |
| P3MOS2000V20J | 2000V | 20mΩ | TO-263-7 | 车规级、工业级 |
